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STMICROELECTRONICS STGWA30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pins Formatt Hitech FCPXPNDGKIT2 an O-ring-sealed nitrogen fill for

SKU 24361078945
4.7
USD125.35 USD156.35

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USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Sep 29 - Oct 4

Description

an O-ring-sealed nitrogen fill for fogproofing

Axis Communications Connector A 6-Pin 2

with black good for outdoor / aerial use

IP50 protection index (mated)

UPC: 793442002021

STMICROELECTRONICS STGWA30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pins Formatt Hitech FCPXPNDGKIT2 an O-ring-sealed nitrogen fill forThis is a IGBT Single Transistor, 60 A, 1. 55 V, 258 W, 650 V, TO 247, 3 Pins product from STMICROELECTRONICS with the model number STGWA30M65DF2Product details DC Collector Current 60A Collector Emitter Saturation Voltage Vce(on) 1. 55V Power Dissipation Pd 258W Collector Emitter Voltage V(br)ceo 650V Transistor Case Style TO 247 No. of Pins 3Pins Operating Temperature Max 175C Product Range Automotive Qualification Standard MSL Other details Brand

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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