GFET-S10 for Sensing applications GFET chemical/gas sensing

chemical/gas sensing

Substrate SiO2/Si

· Gate oxide thickness: 90 nm

"Ultrasensitive detection of SARS-CoV-2 spike protein by graphene field-effect transistors"

Graphene Film

GFET-S10 for Sensing applications GFET chemical/gas sensingGFET S10 (Die size 10 mm x 10 mm) Processed in ISO 7 Cleanroom The GFET S10 chip from Graphenea provides 30 graphene devices distributed in a grid pattern on the chip. Thirty devices have a Hall bar geometry and six have a 2 probe geometry. The Hall bar devices can be used for Hall bar measurements as well as 4 probe and 2 probe devices. There are varying graphene channel dimensions to allow investigation of geometry dependence on device properties.